Part Number Hot Search : 
SPLCGXX SP312EET 12001 LC230WX3 MAX48 SDU9435 TK633 12D12
Product Description
Full Text Search
 

To Download 2SD2210 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Transistors
2SD2210
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter Features
* Low collector-emitter saturation voltage VCE(sat) * Low ON resistance Ron * High forward current transfer ratio hFE
Unit: mm
4.50.1 1.60.2 1.50.1
4.0+0.25 -0.20
2.50.1 3
0.40.04
0.40.08 1.50.1 3
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 1 150 -55 to +150 Unit V V V A A W C C
1.0+0.1 -0.2
1
3 2 0.50.08
45
3.00.15
1 : Base 2 : Collector 3 : Emitter MiniP3-F1 Package
Marking Symbol: 1K
Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 A, IE = 0 IC = 1 mA, IB = 0 IE = 10 A, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 500 mA, IB = 20 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 200 10 1 200 60 0.13 0.40 1.2 V V MHz pF Min 25 20 12 1 800 Typ Max Unit V V V A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification *3: Ron Measuremet circuit
1 k
Rank hFE1
R 200 to 350
S 300 to 500
T 400 to 800
IB = 1 mA f = 1 kHz V = 0.3 V VB VV VA
Ron =
VB x 1 000 () VA - VB
0.4 max.
2.60.1
Publication date: December 2002
SJC00247CED
1
2SD2210
PC Ta
1.4
IC VCE
IB = 4.0 mA 1.0 Ta = 25C 3.5 mA 3.0 mA 0.8 2.5 mA 2.0 mA 0.6 1.5 mA 0.4 1.0 mA 0.5 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
100 IC / IB = 25
1.2
Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness
Collector power dissipation PC (W)
1.2 1.0 0.8 0.6 0.4 0.2 0
Collector current IC (A)
10
1 Ta = 75C 25C 0.1 -25C
0.2
0
0 20 40 60 80 100 120 140 160
0
1
2
3
4
5
6
0.01 0.01
0.1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
100
hFE IC
1 200 VCE = 2 V
400 350
fT I E
VCB = 10 V Ta = 25C
Base-emitter saturation voltage VBE(sat) (V)
IC / IB = 10
Forward current transfer ratio hFE
Transition frequency fT (MHz)
1 000
10
300 250 200 150 100 50 0 -1
800 Ta = 75C 600 25C -25C 400
25C 1 Ta = -25C 75C
0.1
200
0.01 0.01
0.1
1
10
0 0.01
0.1
1
10
-10
-100
Collector current IC (A)
Collector current IC (A)
Emitter current IE (mA)
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
24 IE = 0 Ta = 25C f = 1 MHz 1 000
Ron IB
Ron measuring circuit IB = 1 mA
20
16
ON resistance Ron ()
100
VB V VA f = 1 kHz V = 0.3 V
12
10
8
1
4
0
1
10
100
0.1 0.01
0.1
1
10
Collector-base voltage VCB (V)
Base current IB (mA)
2
SJC00247CED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL
This datasheet has been download from: www..com Datasheets for electronics components.


▲Up To Search▲   

 
Price & Availability of 2SD2210

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X